| PART |
Description |
Maker |
| M29W512B M29W512B120K1T M29W512B120NZ1T M29W512B55 |
512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory 512千位64Kb的8，大量低电压单电源闪
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| M29F512 M29F512B M29F512B45K1T M29F512B45NZ1T M29F |
512 Kbit 64Kb x8 / Bulk Single Supply Flash Memory
512 Kbit 64Kb x8, Bulk Single Supply Flash Memory
512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| C30997-050 C30997-250 |
512 KBIT (64KB X8) UV EPROM and OTP EPROM 光电
|
TE Connectivity, Ltd.
|
| M27W512-100K6 M27W512-100K6TR |
512 Kbit (64 Kbit x8) low-voltage OTP EPROM
|
STMicroelectronics
|
| M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF
1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8）紫外线存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储
512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8）紫外线存储器和OTP存储
512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储
SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储
CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20
CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
Fuses, 100mA 250V SB 5X15 BULK
CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85
CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2
CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 8200UF 450V ELECT SCREW TERM
GLASS TUBE FOR DS80 IRON PKG/4
SERV SWITCH USB COAX CPU CABLES 50 FT
SERV SWITCH USB COAX CPU CABLES 35 FT
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDIP28
64K X 8 OTPROM, 100 ns, PDSO28
64K X 8 OTPROM, 150 ns, PQCC32
64K X 8 OTPROM, 120 ns, PDIP28
64K X 8 OTPROM, 120 ns, PQCC32
64K X 8 OTPROM, 200 ns, PQCC32
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M24512-WMW6TP M24256-BR M24256-BRDW6G M24256-BRDW6 |
512 Kbit and 256 Kbit Serial I2C bus EEPROM with three Chip Enable lines
|
STMICROELECTRONICS[STMicroelectronics]
|
| M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM
4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
http://
|
| M93C46-DS3G_S M93C46-DS3G_W M93C46-DS3P_S M93C46-D |
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE垄莽 serial access EEPROM
|
意法半导
STMicroelectronics
|
| SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| UL1231 UL1221 |
Wzmacniacz p.cz. z kluczowanARW
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| 28F256 M28F256-90C1TR M28F256-90C3TR M28F256-90C6T |
Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC 0 to 70 256K2K的8，芯片擦除）闪存
Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP 0 to 70 256K32K的8，芯片擦除）闪存
256K(32K x8, Chip Erase)FLASH MEMORY 256K2K的8，芯片擦除）闪存
KAPTON STRAP F/GLASS TUBE PKG/5
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC 0 to 70
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SO 0 to 70
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP 0 to 70
256K(32K x8 / Chip Erase)FLASH MEMORY
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M93C76-125 M93C66-125 |
Automotive 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE serial EEPROM
|
STMicroelectronics
|
